Description

„ DESCRIPTION

The UTC 50N06 is three-terminal silicon device with current conduction capability of about 50A, fast switching speed. Low on-state resistance, breakdown voltage rating of 60V, and max threshold voltages of 4 volt. It is mainly suitable electronic ballast, and low power switching mode power appliances. „

FEATURES

• RDS(ON) = 23mΩ@VGS = 10 V
•  Ultra low gate charge ( typical 30 nC )
•  Low reverse transfer Capacitance ( CRSS = typical 80 pF )
•  Fast switching capability
•  100% avalanche energy specified
•  Improved dv/dt capability