Description

MMBT5401 is a PNP surface mount epitaxial Silicon Transistor designed as a general-purpose amplifier and switch for applications requiring high voltage with -55 to 150°C Operating junction temperature range.This device is designed for high voltage driver applications.

Features:

• Collector-Base Voltage (VCBO): 160 V
• Collector-Emitter Voltage (VCEO):150 V
• Emitter-Base Voltage (VEBO):5 V
• Collector Current (Ic): 500 mA
• Power Dissipation (Pd) up to TA=25°C : 250 mW