Description

The NPN Epitaxial-Base Silicon Power
Transistors are Bipolar Power Transistor designed for general purpose power amplifier and switching applications.

Features

• Collector-Emitter Saturation Voltage – VCE(sat) = 1.5 V

. Collector current min(Ic=05A) and (Ic=6A)

. Collector-Emitter voltage = 40V

Documents:

Datasheet